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Same model may have multiple batches, images only for reference.
SIB417DK-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIB417DK-T1-GE3

Part No SIB417DK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 52mOhm @ 5.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.75 nC @ 5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 675 pF @ 4 V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
Base Product Number SIB417
Other Names SIB417DK-T1-GE3TR,SIB417DK-T1-GE3DKR,SIB417DK-T1-GE3CT,SIB417DKT1GE3
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277552-SIB417DK-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIB417DK-T1-GE3 CAD Model

Description

The Vishay Siliconix 1277552-SIB417DK-T1-GE3 is a P-channel MOSFET transistor that is part of the TrenchFET® series.

  • Drain to Source Voltage: 8 V
  • Continuous Drain Current: 9A (Tc)
  • Maximum On-Resistance (Rds On): 52mOhm @ 5.6A and 4.5V
  • Maximum Gate-Source Voltage (Vgs): ±5V
  • Gate Charge (Qg): 12.75 nC @ 5 V
  • Package: SMD (SMT) PowerPAK® SC-75-6
  • Maximum Power Dissipation: 2.4W (Ta) and 13W (Tc)

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