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Same model may have multiple batches, images only for reference.
SIDR140DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIDR140DP-T1-GE3

Part No SIDR140DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIDR140DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 79A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.67mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 8150 pF @ 10 V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
Base Product Number SIDR140
Other Names SIDR140DP-T1-GE3CT,SIDR140DP-T1-GE3DKR,SIDR140DP-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277624-SIDR140DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIDR140DP-T1-GE3 CAD Model

Description

The SIDR140DP-T1-GE3 is a N-channel MOSFET transistor from the TrenchFET® Gen IV series.

  • Mounting: SMD (SMT)
  • Package: PowerPAK® SO-8
  • Drain to Source Voltage (Vdss): 25 V
  • Continuous Drain Current (Id): 79A @ 25°C (Ta) and 100A @ (Tc)
  • Maximum Rds On: 0.67mOhm @ 20A and 10V
  • Gate Charge (Qg): 170 nC @ 10 V
  • Input Capacitance (Ciss): 8150 pF @ 10 Vds
  • Maximum Vgs: +20V and -16V
  • Power Dissipation: 6.25W (Ta) and 125W (Tc)

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