SIE820DF-T1-GE3

Part No SIE820DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 10 V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (S)
Package / Case 10-PolarPAK® (S)
Base Product Number SIE820
Other Names SIE820DF-T1-GE3CT,SIE820DF-T1-GE3DKR,SIE820DF-T1-GE3TR,SIE820DFT1GE3
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277564-SIE820DF-T1-GE3

Description

The Vishay Siliconix SIE820DF-T1-GE3 MOSFET is a N-channel FET designed for use in various applications. With a drain to source voltage of 20V and a continuous drain current of 50A, this MOSFET is designed to handle high power applications. The maximum Rds On is 3.5mOhm at 18A, 4.5V, and the maximum gate charge is 143 nC at 10V. The package is a 10-PolarPAK® (S) and is mounted using SMD (SMT) technology. The temperature range for operation is -55°C to 150°C.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
21+ $2.4174 $50.7654
51+ $1.9836 $101.1636
79+ $1.9216 $151.8064
108+ $1.8596 $200.8368
140+ $1.7976 $251.6640
187+ $1.6116 $301.3692
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 7,050 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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