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Same model may have multiple batches, images only for reference.
SIE878DF-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIE878DF-T1-GE3

Part No SIE878DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 12.5 V
Power Dissipation (Max) 5.2W (Ta), 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (L)
Package / Case 10-PolarPAK® (L)
Base Product Number SIE878
Other Names SIE878DFT1GE3,SIE878DF-T1-GE3DKR,SIE878DF-T1-GE3TR,SIE878DF-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277570-SIE878DF-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIE878DF-T1-GE3 CAD Model

Description

The SIE878DF-T1-GE3 MOSFET is a high-performance N-channel metal oxide semiconductor field-effect transistor (MOSFET) designed for use in discrete semiconductor products.

  • Part of: TrenchFET® series
  • Drain to source voltage (Vdss): 25 V
  • Continuous drain current (Id): 45A (Tc)
  • Maximum on-resistance (Rds On): 5.2mOhm @ 20A, 10V
  • Package: 10-PolarPAK® (L) package
  • Power dissipation: 5.2W (Ta), 25W (Tc)
  • Gate charge (Qg): 36 nC @ 10 V
  • Input capacitance (Ciss): 1400 pF @ 12.5 Vds
  • Status: obsolete product
  • Supplied by: Vishay Siliconix

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