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SIHB11N80E-GE3

Name: SIHB11N80E-GE3
Brand: Vishay
SKU: 1338640
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	SIHB11N80E-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 800V 12A D2PAK / N-Channel 800 V 12A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263)
Datasheet	SIHB11N80E-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	E
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	88 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1670 pF @ 100 V
Power Dissipation (Max)	179W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number	SIHB11
Standard Package	1,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1338640-SIHB11N80E-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHB11N80E-GE3 CAD Model

Alternative Products

Description

The Vishay Siliconix SIHB11N80E-GE3 is an N-channel MOSFET transistor with a drain to source voltage of 800V and a continuous drain current of 12A @ 25°C.

Channel Type: N-Channel
Drain to Source Voltage: 800V
Continuous Drain Current @ Temperature: 12A @ 25°C
Gate-Source Voltage (Max): ±30V
On-Resistance (Max) @ Vgs, Id: 440mOhm @ 10V, 5.5A
Operating Temperature: -55°C to 150°C
Power Dissipation: 179W
Package: D2PAK (TO-263)
Series: SIHB11
Application: Power Supply, Motor Control

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