The Vishay Siliconix SIHB22N60AEL-GE3 is an N-channel MOSFET transistor.

• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Power Dissipation (Max): 208W (Tc)
• Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
• Maximum Operating Temperature: -55°C ~ 150°C (TJ)
• Supplier Device Package: D2PAK (TO-263)
• Status: Obsolete
• Alternative Part: SIHB22N60AEL-GE3CT, SIHB22N60AEL-GE3DKR, SIHB22N60AEL-GE3CT, SIHB22N60AEL-GE3DKR, SIHB22N60AEL-GE3DKRINACTIVE, SIHB22N60AEL-GE3TRINACTIVE, SIHB22N60AEL-GE3TR, SIHB22N60AEL-GE3TR
• Base Product Number: SIHB22