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Same model may have multiple batches, images only for reference.
SIHF35N60EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHF35N60EF-GE3

Part No SIHF35N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHF35N60EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series EF
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 97mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2568 pF @ 100 V
Power Dissipation (Max) 39W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHF35
Other Names SIHF35N60EF-GE3TR,SIHF35N60EF-GE3CTINACTIVE,SIHF35N60EF-GE3TR,SIHF35N60EF-GE3DKR,SIHF35N60EF-GE3CT,SIHF35N60EF-GE3DKRINACTIVE,SIHF35N60EF-GE3CT,SIHF35N60EF-GE3DKR
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277715-SIHF35N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHF35N60EF-GE3 CAD Model

Description

The Vishay Siliconix SIHF35N60EF-GE3 is an N-channel MOSFET transistor with a drain to source voltage of 600V and a continuous drain current of 32A at 25°C.

  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 32A @ 25°C
  • Rds On (Max): 97mOhm @ 17A, 10V
  • Gate Charge: 134 nC @ 10V
  • Mounting Type: Through Hole
  • Package/Case: TO-220-3 Full Pack
  • Maximum Gate-Source Voltage: ±30V
  • Operating Temperature Range: -55°C to 150°C

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