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Same model may have multiple batches, images only for reference.
SIHFR220-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHFR220-GE3

Part No SIHFR220-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHFR220-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHFR220
Other Names 742-SIHFR220-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277919-SIHFR220-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFR220-GE3 CAD Model

Description

The Vishay Siliconix SIHFR220-GE3 is a discrete semiconductor product with N-channel MOSFET feature.

  • Continuous Drain Current: 4.8A @ 25°C
  • Rds On value: Low Rds On value of 800mOhm @ 2.9A and 10V
  • Power Dissipation: 2.5W @ Ta and 42W @ Tc

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