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Same model may have multiple batches, images only for reference.
SIHG20N50C Real Image
Same model may have multiple batches, images only for reference.

SIHG20N50C

Part No SIHG20N50C
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 20A TO247
Datasheet
SIHG20N50C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 76nC @ 10V
Max Input Capacitance 2942pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 042631-SIHG20N50C
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHG20N50C CAD Model

Description

The Vishay SIHG20N50C is a MOSFET technology based N-Channel discrete semiconductor product with a through hole mounting.

  • Maximum Power Dissipation (Tc): 250W
  • Drive Voltage: 10V
  • Maximum Rds On: 270 mOhm @ 10A, 10V
  • Drain-Source Breakdown Voltage: 500V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 76nC @ 10V
  • Maximum Input Capacitance: 2942pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Operating Temperature Range (TJ): -55°C to 150°C
  • Case/Package: TO-247AC
  • Dimension: TO-247-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2263 $55.1835
90+ $1.1487 $103.3830
140+ $1.1099 $155.3860
195+ $1.0323 $201.2985
255+ $0.9935 $253.3425
315+ $0.9547 $300.7305
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,190 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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