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SIHG35N60E-GE3

Part No SIHG35N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2760 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG35
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277754-SIHG35N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG35N60E-GE3 CAD Model

Description

The Vishay Siliconix SIHG35N60E-GE3 is a MOSFET transistor that is part of the Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single category.

  • FET Type: N-Channel
  • Maximum Vgs(th): 4V @ 250µA
  • Maximum Drain to Source Voltage (Vdss): 600 V
  • Maximum Input Capacitance (Ciss): 2760 pF @ 100 Vds
  • Maximum Power Dissipation: 250W (Tc)
  • Mounting Type: Through hole
  • Win Source Part Number: 1277754-SIHG35N60E-GE3

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.7420 $63.1620
25+ $4.7114 $117.7850
38+ $4.5643 $173.4434
53+ $4.4170 $234.1010
68+ $4.2697 $290.3396
91+ $3.8281 $348.3571
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,100 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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