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Same model may have multiple batches, images only for reference.
SIHP22N60AEL-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP22N60AEL-GE3

Part No SIHP22N60AEL-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21A TO220AB / N-Channel 600 V 21A (Tc) 208W (Tc) Through Hole TO-220AB
Datasheet
SIHP22N60AEL-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series EL
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1757 pF @ 100 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP22
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIHP22N60AEL-GE3TR,SIHP22N60AEL-GE3CT,SIHP22N60AEL-GE3DKRINACTIVE,SIHP22N60AEL-GE3DKR-ND,SIHP22N60AEL-GE3CT-ND,SIHP22N60AEL-GE3TR-ND,SIHP22N60AEL-GE3TRINACTIVE,SIHP22N60AEL-GE3DKR
Standard Package 1,000
Win Source Part Number 1093068-SIHP22N60AEL-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP22N60AEL-GE3 CAD Model

Description

The Vishay Siliconix SIHP22N60AEL-GE3 is an N-channel MOSFET transistor that is designed for discrete semiconductor products.

  • Manufacturer: Vishay Siliconix
  • FET Type: N-channel
  • Drain to Source Voltage (Vdss): 600 V
  • Current: 21A (Tc) @ 25°C
  • Maximum Rds On: 180mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Mounting Type: Through-hole
  • Package: TO-220-3
  • Maximum Power Dissipation: 208W (Tc)

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