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SIHU4N80E-GE3

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Part No	SIHU4N80E-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHU4N80E-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	E
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	622 pF @ 100 V
Power Dissipation (Max)	69W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB
Base Product Number	SIHU4
Standard Package	3,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277728-SIHU4N80E-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHU4N80E-GE3 CAD Model

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Description

The SIHU4N80E-GE3 is a MOSFET (Metal Oxide) N-Channel FET that features a drain to source voltage of 800 V and a continuous drain current of 4.3A (Tc).

Drain to Source Voltage: 800 V
Continuous Drain Current: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250μA
Maximum Power Dissipation: 69W (Tc)
Mounting: Through Hole
Package/Case: TO-251-3 Long Leads, IPak, TO-251AB
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
Maximum Vgs: ±30V
Operating Temperature Range: -55°C ~ 150°C (TJ)
Manufacturer: Vishay Siliconix

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