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Same model may have multiple batches, images only for reference.
SIR165DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR165DP-T1-GE3

Part No SIR165DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 60A PPAK SO-8 / P-Channel 30 V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
SIR165DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen III
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 138 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4930 pF @ 15 V
Power Dissipation (Max) 69.4W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR165
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIR165DP-T1-GE3CT,SIR165DP-T1-GE3TR,SIR165DP-T1-GE3DKR
Standard Package 3,000
Win Source Part Number 1093109-SIR165DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIR165DP-T1-GE3 CAD Model

Description

The SIR165DP-T1-GE3 is a P-channel MOSFET transistor manufactured by Vishay Siliconix.

  • Series: TrenchFET® Gen III
  • Maximum Drain to Source Voltage: 30V
  • Maximum Continuous Drain Current: 60A @ 25°C
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
  • Supply and Demand: Limited
  • Package Type: Tape and Reel
  • Mounting: PowerPAK® SO-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
27+ $1.9212 $51.8724
56+ $1.7973 $100.6488
87+ $1.7353 $150.9711
125+ $1.6114 $201.4250
162+ $1.5494 $251.0028
202+ $1.4874 $300.4548
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Availability: 2,361 pieces
MOQ: 27 pcs
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