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Same model may have multiple batches, images only for reference.
SIR820DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR820DP-T1-GE3

Part No SIR820DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PPAK SO-8
Datasheet
SIR820DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3512 pF @ 15 V
Power Dissipation (Max) 37.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR820
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 324108-SIR820DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIR820DP-T1-GE3 CAD Model

Description

The SIR820DP-T1-GE3 is an N-channel MOSFET transistor from Vishay.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 40A @ 25°C
  • Maximum On-Resistance: 3mOhm @ 15A and 10V
  • Gate Charge: 95nC @ 10V
  • Input Capacitance: 3512pF @ 15V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7832 $50.9080
160+ $0.6427 $102.8320
245+ $0.6226 $152.5370
335+ $0.6025 $201.8375
430+ $0.5824 $250.4320
575+ $0.5222 $300.2650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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