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SIR840DP-T1-GE3

Part No SIR840DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 097339-SIR840DP-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIR840DP-T1-GE3 CAD Model

Description

The SIR840DP-T1-GE3 is a Power MOSFET from Vishay Siliconix, designed for efficient power switching applications. It is an N-channel device, packaged in a PowerPAK® SO-8. This MOSFET is designed for low on-resistance, fast switching, and is halogen-free and RoHS compliant (indicated by the 'GE3' suffix). It is part of Vishay's portfolio of power management solutions.

Applications:

  • Synchronous Rectification in DC-DC Converters
  • Load Switching
  • Power Management in Portable Devices
  • Battery Management Systems
  • Motor Control Applications

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses for improved efficiency.
  • Fast Switching Speed: Reduces switching losses, increasing overall system efficiency.
  • Logic Level Gate Drive: Allows direct drive from microcontrollers and logic circuits.
  • TrenchFET® Power MOSFET Technology: Enhances cell density for ultra-low on-resistance.
  • PowerPAK® SO-8 Package: Compact footprint with excellent thermal performance.
  • Halogen-Free and RoHS Compliant: Environmentally friendly.

Benefits:

  • High Efficiency: Low RDS(on) and fast switching contribute to reduced power losses.
  • Compact Design: The small PowerPAK SO-8 package enables high-density board layouts.
  • Simplified Gate Drive: Logic-level gate drive simplifies the design of the gate drive circuitry.
  • Improved Thermal Performance: The PowerPAK SO-8 package offers efficient heat dissipation.
  • Environmentally Friendly: Halogen-free and RoHS compliant.

Additional Details:

The SIR840DP-T1-GE3 features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) that varies based on operating temperature and mounting conditions. Typical values for ID are in the range of 10-15A. The gate threshold voltage (VGS(th)) is designed for compatibility with logic-level signals. The PowerPAK SO-8 package allows for efficient heat dissipation, enhancing the device's reliability and performance. This MOSFET is designed to operate over a temperature range of -55°C to +150°C. Its low on-resistance characteristics are particularly beneficial in applications where minimizing power losses is critical, such as battery-powered devices and high-efficiency DC-DC converters. The device's fast switching characteristics also make it suitable for high-frequency power conversion applications. The PowerPAK SO-8 package is designed for surface mounting and automated assembly, reducing manufacturing costs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5648 $59.3040
250+ $0.4632 $115.8000
390+ $0.4493 $175.2270
535+ $0.4343 $232.3505
690+ $0.4204 $290.0760
925+ $0.3765 $348.2625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 118,200 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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