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Same model may have multiple batches, images only for reference.
SIR866DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR866DP-T1-GE3

Part No SIR866DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 60A PPAK SO-8
Datasheet
SIR866DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 107nC @ 10V
Max Input Capacitance 4730pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 1.9 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028767-SIR866DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR866DP-T1-GE3 CAD Model

Description

The Vishay 028767-SIR866DP-T1-GE3 is an N-Channel MOSFET with a maximum drain-source breakdown voltage of 20V and a continuous drain current of 60A (Tc) at 25°C.

  • Power Dissipation: 5.4W (Ta) and 83W (Tc)
  • Drive Voltage (max Rds On, min Rds On): 4.5V and 10V
  • Gate-Source Threshold Voltage: 2.3V @ 250μA
  • Maximum Rds On at Id,Vgs: 1.9 mOhm @ 20A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7404 $59.2320
195+ $0.6075 $118.4625
295+ $0.5879 $173.4305
410+ $0.5694 $233.4540
525+ $0.5509 $289.2225
705+ $0.4932 $347.7060
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MOQ: 80 pcs
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