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SIR870BDP-T1-RE3

Part No SIR870BDP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 18.8A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4870 pF @ 50 V
Power Dissipation (Max) 5.4W (Ta), 100W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR870
Other Names 742-SIR870BDP-T1-RE3DKR,742-SIR870BDP-T1-RE3TR,742-SIR870BDP-T1-RE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277597-SIR870BDP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR870BDP-T1-RE3 CAD Model

Description

The 1277597-SIR870BDP-T1-RE3 is a MOSFET transistor in the TrenchFET® series manufactured by Vishay Siliconix.

  • FET Type: N-channel
  • Drain to Source Voltage: 100 V
  • Maximum Continuous Drain Current: 18.8A (Ta) and 81A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
  • Maximum Gate Charge (Qg) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
  • Package: PowerPAK® SO-8
  • Maximum Power Dissipation: 5.4W (Ta), 100W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.6282 $52.5640
47+ $2.1565 $101.3555
72+ $2.0891 $150.4152
99+ $2.0217 $200.1483
128+ $1.9543 $250.1504
172+ $1.7521 $301.3612
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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