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SIS322DNT-T1-GE3

Part No SIS322DNT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 38.3A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 38.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 21.5nC @ 10V
Max Input Capacitance 1000pF @ 15V
Maximum Gate-Source Voltage +20V, -16V
Power Dissipation (Max) 3.2W (Ta), 19.8W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096492-SIS322DNT-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIS322DNT-T1-GE3 CAD Model

Description

The Vishay SIS322DNT-T1-GE3 MOSFET is a N-channel device with a maximum drain-source voltage of 30V and a continuous drain current of 38.3A @ Tc.

  • Gate-Source Threshold Voltage: 2.4V @ 250μA
  • Maximum Gate Charge: 21.5nC @ 10V
  • Maximum Power Dissipation: 3.2W @ Ta and 19.8W @ Tc
  • Maximum Rds On: 7.5 mOhm @ 10A and 10V
  • Package: PowerPAK 1212-8
  • Mounting: SMD
  • Series: SiS322DN
  • Compliance: halogen-free standards
  • Popularity Rating: medium
  • Supply and Demand Status: sufficient.

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