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Same model may have multiple batches, images only for reference.
SISA40DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SISA40DN-T1-GE3

Part No SISA40DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SISA40DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 43.7A (Ta), 162A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Vgs (Max) +12V, -8V
Input Capacitance (Ciss) (Max) @ Vds 3415 pF @ 10 V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SISA40
Other Names SISA40DN-T1-GE3CT,SISA40DN-T1-GE3DKR,SISA40DN-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277662-SISA40DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISA40DN-T1-GE3 CAD Model

Description

The SISA40DN-T1-GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

  • Series: TrenchFET Gen IV
  • Mounting: SMD (SMT)
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 43.7A (Ta), 162A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.6872 $50.6160
75+ $1.3844 $103.8300
115+ $1.3411 $154.2265
155+ $1.2979 $201.1745
200+ $1.2546 $250.9200
270+ $1.1248 $303.6960
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