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SQ2308CES-T1_GE3

Part No SQ2308CES-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.3A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 5.3nC @ 10V
Max Input Capacitance 205pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 2.3A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23 (TO-236AB)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1101693-SQ2308CES-T1_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQ2308CES-T1_GE3 CAD Model

Description

The Vishay SQ2308CES-T1_GE3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Channel Type: N-Channel
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 2W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 2.3A (Tc)
  • Maximum Gate Charge @ 10V: 5.3nC
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Rds On @ 2.3A and 10V: 150 mOhm
  • Package: SOT-23 (TO-236AB)
  • Mounting Type: SMD (SMT)
  • Popularity: Medium
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.1803 $50.4840
595+ $0.1689 $100.4955
920+ $0.1632 $150.1440
1,320+ $0.1518 $200.3760
1,715+ $0.1461 $250.5615
2,140+ $0.1404 $300.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 68,000 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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