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SQ3989EV-T1_GE3

Part No SQ3989EV-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2 P-CH 30V 2.5A 6TSOP / Mosfet Array 2 P-Channel (Dual) 30V 2.5A (Tc) 1.67W Surface Mount 6-TSOP
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Rds On (Max) @ Id, Vgs 155mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.1nC @ 10V
Power - Max 1.67W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Base Product Number SQ3989
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQ3989EV-T1_GE3CT,SQ3989EV-T1_GE3TR,SQ3989EV-T1_GE3DKR
Standard Package 3,000
Win Source Part Number 1095779-SQ3989EV-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQ3989EV-T1_GE3 CAD Model

Description

The SQ3989EV-T1_GE3 is a dual P-channel MOSFET transistor array from Vishay Siliconix's TrenchFET series.

  • Designed for: automotive use
  • AEC-Q101: compliant
  • Package: tape and reel
  • Standard Package: 3,000
  • Mounting: SMD (SMT)
  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current: 2.5A (Tc)
  • Maximum Rds On: 155mOhm @ 400mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Maximum Power: 1.67W
  • Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4985 $52.3425
245+ $0.4091 $100.2295
380+ $0.3963 $150.5940
525+ $0.3835 $201.3375
675+ $0.3707 $250.2225
905+ $0.3324 $300.8220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,090 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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