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SQJ958EP-T1_GE3

Part No SQJ958EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 34.9mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1075pF @ 30V
Power - Max 35W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJ958
Other Names SQJ958EP-T1_GE3DKR,SQJ958EP-T1_GE3CT,SQJ958EP-T1_GE3TR,SQJ958EP-T1_GE3
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1278528-SQJ958EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ958EP-T1_GE3 CAD Model

Description

The Vishay SQJ958EP-T1_GE3 is a dual N-channel MOSFET transistor array designed for automotive applications.

  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 20A @ 25°C
  • On-Resistance: 34.9mOhm @ 4.5A and 10V gate-source voltage
  • Gate Charge: 23nC @ 10V
  • Input Capacitance: 1075pF @ 30V
  • Threshold Voltage: 2.5V @ 250μA
  • Package: PowerPAK SO-8 Dual
  • Mounting: Surface mountable
  • Power Dissipation: 35W
  • Operating Temperature Range: -55°C to 175°C
  • Compliance: AEC-Q101 compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9547 $52.5085
130+ $0.7833 $101.8290
200+ $0.7589 $151.7800
275+ $0.7344 $201.9600
355+ $0.7099 $252.0145
475+ $0.6365 $302.3375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,690 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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