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Same model may have multiple batches, images only for reference.
SQM100N10-10-GE3 Real Image
Same model may have multiple batches, images only for reference.

SQM100N10-10-GE3

Part No SQM100N10-10-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO-263
Datasheet
SQM100N10-10-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 185nC @ 10V
Max Input Capacitance 8050pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 212092-SQM100N10-10-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name SQM100N10-10
Introduction Date September 21, 2010
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SQM100N10-10-GE3 CAD Model

Description

The Vishay SQM100N10-10-GE3 is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Power Dissipation: 375W
  • Package: TO-263 (D2Pak)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds On: 10.5 mOhm @ 30A, 10V
  • Packaging: Tape and reel
  • Operating Temperature: -55°C to 175°C

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