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SQS462EN-T1-GE3

Part No SQS462EN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Categories Uncategorized
Manufacturer Vishay
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 838672-SQS462EN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SQS462EN-T1-GE3 CAD Model

Description

The SQS462EN-T1-GE3 is an N-Channel MOSFET manufactured by Vishay. This MOSFET is designed for use in a wide variety of power management applications, including load switching, DC-DC conversion, and battery management systems. It offers a combination of low on-resistance and gate charge, which contributes to improved efficiency and reduced power losses. The device comes in a PowerPAK® SO-8 package, making it suitable for space-constrained applications.

Applications:

  • Load Switching
  • DC-DC Conversion
  • Battery Management Systems
  • Power Management in Portable Devices
  • Synchronous Rectification

Features:

  • Low On-Resistance: Reduces conduction losses for improved efficiency.
  • Low Gate Charge: Minimizes switching losses at high frequencies.
  • Logic Level Gate Drive: Allows direct drive from microcontrollers and other logic devices.
  • PowerPAK® SO-8 Package: Compact footprint with enhanced thermal performance.
  • Trench MOSFET Technology: Provides enhanced performance and efficiency.
  • RoHS Compliant: Environmentally friendly, adhering to RoHS standards.

Benefits:

  • Increased Efficiency: Low on-resistance and gate charge minimize power losses.
  • Extended Battery Life: Higher efficiency leads to longer battery life in portable applications.
  • Compact Design: Small package allows for integration into space-constrained applications.
  • Simplified Drive Circuitry: Logic level gate drive simplifies gate drive requirements.
  • Improved Thermal Performance: PowerPAK SO-8 package facilitates efficient heat dissipation.

Additional Details:

The SQS462EN-T1-GE3 is characterized by a drain-source voltage (Vds) rating of 30V and a continuous drain current (Id) of up to 8A. The on-resistance (Rds(on)) is typically 10 mΩ at a gate-source voltage (Vgs) of 10V. This device is designed to operate over a wide temperature range. The PowerPAK® SO-8 package offers excellent thermal performance. The logic level gate drive allows for direct interfacing. The low gate charge contributes to faster switching speeds and reduced switching losses. The SQS462EN-T1-GE3 is commonly used in applications where both efficiency and size are critical design considerations. The RoHS compliance ensures that the device meets environmental standards.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6633 $58.2155
75+ $1.3647 $102.3525
115+ $1.3221 $152.0415
160+ $1.2794 $204.7040
205+ $1.2368 $253.5440
275+ $1.1089 $304.9475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,600 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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