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Same model may have multiple batches, images only for reference.
SUD50N04-37P-T4-E3 Vishay
Same model may have multiple batches, images only for reference.

SUD50N04-37P-T4-E3

Part No SUD50N04-37P-T4-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 5.4A TO252
Datasheet
SUD50N04-37P-T4-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 5.4A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 640pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 10.8W (Tc)
Maximum Rds On at Id,Vgs 37 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1104102-SUD50N04-37P-T4-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SUD50N04-37P-T4-E3 CAD Model

Description

The Vishay 1104102-SUD50N04-37P-T4-E3 is a N-channel MOSFET transistor with a maximum power dissipation of 2W (Ta) and 10.8W (Tc).

  • Manufacturer: Vishay
  • Part Number: 1104102-SUD50N04-37P-T4-E3
  • Channel Type: N-channel
  • Power Dissipation: 2W (Ta) and 10.8W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 5.4A (Ta) and 8A (Tc)
  • Maximum Rds On @ Id,Vgs: 37 mOhm @ 5A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 20nC @ 10V
  • Status: Obsolete(EOL)
  • Mounting Technology: SMD (SMT)
  • Drive Voltage: 4.5V, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-252, (D-Pak)

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