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Same model may have multiple batches, images only for reference.
SUM09N20-270-E3 Vishay
Same model may have multiple batches, images only for reference.

SUM09N20-270-E3

Part No SUM09N20-270-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9A D2PAK
Datasheet
SUM09N20-270-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 580pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 60W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 128202-SUM09N20-270-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUM09N20-270-E3 CAD Model

Description

The Vishay SUM09N20-270-E3 MOSFET is a N-channel device that can handle a maximum power dissipation of 3.75W at an operating temperature range of -55°C to 175°C.

  • Status: obsolete (EOL)
  • Package: TO-263 (D2Pak)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 9A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 270 mOhm @ 5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 17nC @ 10V
  • Supply and Demand Status: balanced

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132+ $2.6364 $348.0048
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