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Same model may have multiple batches, images only for reference.
SUM50010E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUM50010E-GE3

Part No SUM50010E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SUM50010E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 1.75mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 212 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10895 pF @ 30 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SUM50010
Standard Package 800
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277489-SUM50010E-GE3
Ultra Librarian 3D Model Ultra Librarian SUM50010E-GE3 CAD Model

Description

The SUM50010E-GE3 by Vishay Siliconix is a MOSFET transistor that offers reliable performance.

  • Transistor Type: N-channel
  • Drain to Source Voltage: 60 V
  • Continuous Drain Current @ 25°C: 150A
  • Maximum Rds On @ 30A and 10V: 1.75mOhm
  • Package: Tube
  • Components per Package: 800
  • Gate Charge @ 10 V: 212 nC
  • Input Capacitance @ 30 Vds: 10895 pF
  • MSL Level: 1
  • HTSUS Code: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.6327 $50.8578
34+ $2.9807 $101.3438
52+ $2.8876 $150.1552
72+ $2.7944 $201.1968
93+ $2.7013 $251.2209
124+ $2.4218 $300.3032
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Availability: 774 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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