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Same model may have multiple batches, images only for reference.
SUM90N06-4M4P-E3 Vishay
Same model may have multiple batches, images only for reference.

SUM90N06-4M4P-E3

Part No SUM90N06-4M4P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 60V 90A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 6190pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 300W (Tc)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 108125-SUM90N06-4M4P-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name SUM90N06-4M4P
Introduction Date September 18, 2007
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SUM90N06-4M4P-E3 CAD Model

Description

The Vishay SUM90N06-4M4P-E3 is an N-channel MOSFET with a drain-source breakdown voltage of 60V and continuous drain current of 90A (Tc).

  • Maximum Rds On at Id,Vgs: 4.4 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Package: TO-263 (D2Pak) case
  • Suitable for: surface mount mounting
  • Power Dissipation: 3.75W (Ta), 300W (Tc)
  • Maximum Operating Temperature Range: -55°C to 175°C (TJ)
  • Overall: a high-performance and reliable solution for your MOSFET needs

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22+ $4.5715 $100.5730
34+ $4.4286 $150.5724
47+ $4.2857 $201.4279
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81+ $3.7143 $300.8583
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