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SUP57N20-33

Part No SUP57N20-33
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 57A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 5100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 300W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 057017-SUP57N20-33
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUP57N20-33 CAD Model

Description

Vishay 057017-SUP57N20-33 is an N-Channel MOSFET electronic component that is used in discrete semiconductor products.

  • Status: actively used
  • Supply and Demand Status: balance
  • Manufacturer: Vishay
  • Win Source Part Number: 057017-SUP57N20-33
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 57A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 130nC @ 10V
  • Mounting Technology: Through Hole
  • Case / Package: TO-220AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.0427 $60.5124
28+ $4.1384 $115.8752
44+ $4.0090 $176.3960
60+ $3.8796 $232.7760
77+ $3.7503 $288.7731
104+ $3.3622 $349.6688
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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