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Same model may have multiple batches, images only for reference.
SUP60N10-16L-E3 Vishay
Same model may have multiple batches, images only for reference.

SUP60N10-16L-E3

Part No SUP60N10-16L-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 60A TO220AB
Datasheet
SUP60N10-16L-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3820pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 057018-SUP60N10-16L-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUP60N10-16L-E3 CAD Model

Description

The SUP60N10-16L-E3 is a power MOSFET manufactured by Vishay.

  • Channel Type: N-channel
  • Maximum Drain-Source Voltage: 100V
  • Continuous Drain Current: 60A
  • On-Resistance: 16mOhm
  • Gate-Source Threshold Voltage: 3V

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