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SUP70040E-GE3

Part No SUP70040E-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 100V 120A TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Maximum) at Id, Vgs 4mOhm at 20A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 120nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5100pF at 50V
Power Dissipation (Maximum) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811472-SUP70040E-GE3
Ultra Librarian 3D Model Ultra Librarian SUP70040E-GE3 CAD Model

Description

The SUP70040E-GE3 is an N-Channel MOSFET component from Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 100V
  • Power Dissipation (Maximum): 375W (Tc)
  • Manufacturer Pack Quantity: 500
  • MSL Level: 1 (Unlimited)
  • Rds On (Maximum): 4mOhm @ 20A, 10V
  • Gate Charge (Qg) (Maximum): 120nC @ 10V
  • Input Capacitance (Ciss) (Maximum): 5100pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5199 $57.9577
56+ $2.0677 $115.7912
87+ $2.0030 $174.2610
120+ $1.9385 $232.6200
155+ $1.8738 $290.4390
207+ $1.6800 $347.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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