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IRFBE20PBF

Part No IRFBE20PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 1.8A TO-220AB / Trans MOSFET N-CH 800V 1.8A 3-Pin(3+Tab) TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 54W (Tc)
Maximum Rds On at Id,Vgs 6.5 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017582-IRFBE20PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFBE20
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFBE20PBF CAD Model

Description

The Vishay MOSFET is an N-channel polarity component used in various electronic devices.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 1.8A @ 25°C
  • Maximum Rds On at Id,Vgs: 6.5 Ohm @ 1.1A, 10V
  • Part: IRFBE20PBF
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Package: TO-220AB
  • Maximum Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1587 $52.1415
110+ $0.9507 $104.5770
165+ $0.9210 $151.9650
225+ $0.8913 $200.5425
295+ $0.8616 $254.1720
390+ $0.7725 $301.2750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,070 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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