The Cree/Wolfspeed C2M0040120D is a silicon carbide (SiC) power MOSFET designed for high-efficiency, high-power applications. It offers superior performance compared to traditional silicon MOSFETs, including lower switching losses, higher breakdown voltage, and higher operating temperatures.

Applications

• Solar Inverters
• Motor Drives
• Power Supplies
• Electric Vehicles
• Hybrid Electric Vehicles
• Induction Heating

Features

• 1200V Blocking Voltage
• 40 mΩ On-Resistance (Rds(on))
• Low Gate Charge
• High-Speed Switching
• Avalanche Ruggedness
• RoHS Compliant
• TO-247 Package

Benefits

• Increased efficiency in power conversion systems.
• Reduced system size and weight due to higher switching frequency.
• Improved thermal performance due to lower losses.
• Enhanced reliability in harsh environments.
• Lower system cost through reduced cooling requirements.

Technical Specifications

The C2M0040120D is a 1200V SiC MOSFET with an on-resistance of 40 mΩ. It features a low gate charge, enabling high-speed switching operation. The device is avalanche rugged, providing protection against voltage transients. It is packaged in a TO-247 package. Its superior performance enables higher efficiency, higher power density, and improved reliability in power electronic systems. The gate threshold voltage is typically around 2.5V, and it is designed to be driven with a gate voltage of 15-20V for optimal performance. The maximum operating junction temperature is 150°C.