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DMC3036LSD-13

Part No DMC3036LSD-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 5A/4.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A, 4.5A
Maximum Rds On at Id,Vgs 36 mOhm @ 6.9A, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 7.9nC @ 10V
Max Input Capacitance 431pF @ 15V
Maximum Power Dissipation 1.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 080559-DMC3036LSD-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMC3036LSD-13 CAD Model

Description

DMC3036LSD-13 MOSFET by Diodes Incorporated

The DMC3036LSD-13 is a high-performance, dual N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a testament to the company's commitment to providing energy-efficient, compact, and reliable components for a wide range of electronic applications. The device is particularly well-suited for power management tasks within complex electronic systems.

Constructed with advanced trench MOSFET technology, the DMC3036LSD-13 offers a low on-resistance, which results in minimal conduction losses and improved overall efficiency. This characteristic is crucial for applications that demand high efficiency, such as DC-DC converters, power supplies, and load switches. The device is housed in a RoHS-compliant, SOP-8 package, which not only ensures a small footprint but also provides excellent thermal performance.

Key features of the DMC3036LSD-13 include:

  • Low On-Resistance: The device boasts a low R<sub>DS(on), which enhances its efficiency by reducing power dissipation.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), enabling it to handle significant power levels.
  • Fast Switching Speed: The MOSFET's fast switching capabilities make it ideal for high-speed circuitry, reducing switching losses.
  • Dual N-Channel: The dual N-channel configuration allows for flexibility in design, as it can be used in various circuit topologies.
  • Thermal Management: Its SOP-8 package is designed for optimal heat dissipation, ensuring the device operates within its specified temperature range even under high load conditions.
  • Lead-Free and RoHS Compliant: Compliance with environmental standards makes this component suitable for use in green products and applications.

The DMC3036LSD-13 is not only a testament to Diodes Incorporated's engineering expertise but also reflects the company's dedication to environmental stewardship. With its combination of performance, efficiency, and reliability, this MOSFET is an excellent choice for designers looking to optimize their power management systems.

Whether you're developing power supplies, motor controls, or any other application requiring efficient power handling, the DMC3036LSD-13 provides the performance and reliability needed to ensure your product's success.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2599 $58.4775
545+ $0.2125 $115.8125
840+ $0.2067 $173.6280
1,160+ $0.1998 $231.7680
1,500+ $0.1929 $289.3500
2,000+ $0.1733 $346.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 134,100 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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