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DMG8880LK3-13

Part No DMG8880LK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A TO252-3L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 27.6nC @ 10V
Max Input Capacitance 1289pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.68W (Ta)
Maximum Rds On at Id,Vgs 9.3 mOhm @ 11.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 014394-DMG8880LK3-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMG8880LK3-13 CAD Model

Description

Product Overview: DMG8880LK3-13 from Diodes Incorporated

The DMG8880LK3-13 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This product is part of the MOSFETs family, which are widely used in power management applications due to their efficiency and fast switching capabilities.

Key Features

  • Low On-Resistance: The DMG8880LK3-13 boasts a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency, making it suitable for high-performance power circuits.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), allowing it to handle significant power without performance degradation, which is ideal for demanding applications.
  • Advanced Packaging: Encased in a space-saving DFN2020 package, the DMG8880LK3-13 ensures a compact footprint on the PCB without compromising on power handling or thermal performance.
  • Thermal Performance: The device is designed with excellent thermal characteristics, ensuring reliable operation even under high temperature conditions.

Applications

The DMG8880LK3-13 is versatile and can be used in a variety of applications, including:

  • Power Management
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives
  • Computing

Product Specifications

The DMG8880LK3-13 from Diodes Incorporated comes with the following specifications:

  • Drain-Source Voltage (V<sub>DS): 30V
  • Continuous Drain Current (I<sub>D): 40A
  • Gate-Source Voltage (V<sub>GS): ±20V
  • On-Resistance (R<sub>DS(on)): As low as 2.5mΩ at V<sub>GS = 10V
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products that meet stringent industry standards. The DMG8880LK3-13 is no exception, with its robust design and manufacturing process ensuring reliability and performance consistency. Customers can expect a product that delivers both in terms of efficiency and durability.

For detailed technical information, datasheets, and support, visit the Diodes Incorporated website or contact their customer service for assistance with the DMG8880LK3-13 MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $19.7436 $59.2308
8+ $16.2000 $129.6000
12+ $15.6941 $188.3292
16+ $15.1883 $243.0128
20+ $14.6812 $293.6240
27+ $13.1624 $355.3848
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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