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DMJT9435-13

Part No DMJT9435-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 3A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 550mV @ 300mA, 3A
Typical Gain (hFE) (Min) 110 @ 1.2A, 1V
Maximum Power Dissipation 1.2W
Frequency - Transition 160MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 1033704-DMJT9435-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMJT9435-13 CAD Model

Description

Diodes Incorporated DMJT9435-13 P-Channel Enhancement Mode MOSFET

The DMJT9435-13 from Diodes Incorporated is a high-performance, P-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed for power management applications. This MOSFET is an excellent choice for designers looking for a component that offers low on-resistance, high efficiency, and reliable performance in a compact package.

The DMJT9435-13 is built using advanced trench MOSFET technology, which provides superior on-state resistance and supports higher current handling capabilities while maintaining a low thermal footprint. This makes the DMJT9435-13 an ideal solution for applications where space and power efficiency are critical, such as portable electronics, power supply circuits, and load switch applications.

Feature highlights of the DMJT9435-13 include:

  • Low On-Resistance: The device features a very low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Power Dissipation: With its robust design, the DMJT9435-13 can handle a substantial amount of power dissipation, making it suitable for demanding applications.
  • Small Package Size: The MOSFET comes in a compact SOT-23 package, which is ideal for space-constrained applications without compromising on power handling.
  • High Threshold Voltage: The device is characterized by a high threshold voltage, ensuring that it remains off under small gate-to-source voltage fluctuations, thus preventing unintentional turn-ons.
  • Fast Switching Speed: The DMJT9435-13 offers fast switching speeds, which is beneficial for applications that require quick response times.

With its combination of low on-resistance, high efficiency, and compact form factor, the DMJT9435-13 is a versatile component that can be used in a wide range of electronic devices. Its reliability and performance make it a preferred choice for engineers and designers looking to enhance the power management capabilities of their projects.

For detailed specifications, datasheets, and application notes, visit the Diodes Incorporated website or contact their support team for further assistance on integrating the DMJT9435-13 into your design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
340+ $0.1709 $58.1060
825+ $0.1404 $115.8300
1,275+ $0.1360 $173.4000
1,760+ $0.1316 $231.6160
2,275+ $0.1272 $289.3800
3,040+ $0.1140 $346.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,760 pieces
MOQ: 340 pcs
Order Increment : 1 pcs
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