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DMN1032UCB4-7

Part No DMN1032UCB4-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 12V 4.8A 4-Pin U-WLB T/R / MOSFET N-CH 12V 4.8A U-WLB1010-4
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 4.5nC @ 4.5V
Max Input Capacitance 450pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 26 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package U-WLB1010-4
Dimension 4-UFBGA, WLBGA
Win Source Part Number 1033707-DMN1032UCB4-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name DMN1032UCB4
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian DMN1032UCB4-7 CAD Model

Description

The DMN1032UCB4-7 from Diodes Incorporated is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed for a wide range of applications. This MOSFET is an ideal choice for power management tasks in both portable and stationary electronics due to its low on-resistance and high switching speed.

Key Features

  • Low On-Resistance: The DMN1032UCB4-7 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in circuits where it is deployed.
  • High-Speed Switching: With its fast switching capabilities, this FET can handle high-frequency operations with ease, making it suitable for modern electronic applications that require quick response times.
  • Low Threshold Voltage: A low gate threshold voltage ensures that this component can be easily driven by logic-level voltages, which is particularly advantageous in low-voltage applications.
  • Compact Package: Enclosed in a small DFN2020 package, the DMN1032UCB4-7 is optimized for space-constrained applications, allowing designers to save valuable board space without compromising performance.

Applications

The versatility of the DMN1032UCB4-7 makes it suitable for a variety of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Powered Devices
  • Load Switches
  • Motor Control Systems

Product Specifications

The DMN1032UCB4-7 operates with a continuous drain current of up to 4.7A, making it capable of handling moderate power levels. The device can support a maximum drain-source voltage (Vds) of 30V, which provides a good margin for various electronic designs. Additionally, the MOSFET's power dissipation is rated at 1.4W, ensuring that it can perform efficiently without overheating in typical applications.

For engineers and designers looking for a reliable and efficient N-Channel MOSFET, the DMN1032UCB4-7 from Diodes Incorporated offers an excellent balance of performance, size, and ease of use, making it a valuable component in any power management or switching application.

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2505 $50.1000
490+ $0.2055 $100.6950
755+ $0.1991 $150.3205
1,040+ $0.1927 $200.4080
1,345+ $0.1863 $250.5735
1,800+ $0.1670 $300.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600,000 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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