The DMN10H700S-7 is a high-performance, N-channel enhancement mode field effect transistor (FET) designed by Diodes Incorporated. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and miniaturized solutions for a wide range of electronic applications. It is particularly well-suited for high-speed switching and power management tasks.

Key Features

• Low On-Resistance: The DMN10H700S-7 boasts a low on-resistance, which minimizes power loss and improves overall efficiency during operation.
• High-Speed Switching: Designed for rapid switching, this device ensures high performance in applications where switching speed is critical.
• Surface Mount Package: The SOT-23 package is ideal for space-constrained applications, offering a compact footprint without sacrificing performance.
• Lead-Free and RoHS Compliant: In line with modern environmental standards, this product is lead-free and RoHS compliant, making it suitable for use in green electronics.

Applications

The DMN10H700S-7 is versatile and can be used in various applications, including:

• Power Management
• DC-DC Converters
• Load Switches
• Battery Management Systems
• Motor Drives

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 100V Continuous Drain Current (I<sub>D) 760mA Power Dissipation (P<sub>D) 1.4W R<sub>DS(on) 0.45Ω @ V<sub>GS = 10V

Ordering Information

For ordering and purchasing information, interested parties can refer to the part number DMN10H700S-7. Detailed datasheets and technical support are available through the Diodes Incorporated website or authorized distributors.