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DMN2005LPK-7

Part No DMN2005LPK-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 440MA 3-DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 440mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Gate-Source Threshold Voltage 1.2V @ 100μA
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 450mW (Ta)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 10mA, 4V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-DFN1006 (1.0x0.6)
Dimension 3-UFDFN
Win Source Part Number 014412-DMN2005LPK-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN2005LPK-7 CAD Model

Description

DMN2005LPK-7 MOSFET by Diodes Incorporated

The DMN2005LPK-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is a part of their extensive line of discrete, analog, and mixed-signal semiconductors tailored to meet the requirements of a wide variety of electronic applications. The DMN2005LPK-7 is particularly well-suited for portable and power-sensitive devices due to its low on-resistance and minimal gate charge.

Key Features

  • Low On-Resistance: The DMN2005LPK-7 boasts an exceptionally low on-resistance, which ensures minimal power loss and heat generation during operation, making it an energy-efficient choice for designers.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications. It enables efficient power management and contributes to the performance of the overall system.
  • Low Threshold Voltage: The device operates at a low threshold voltage, which allows for better control of the switching characteristics and is suitable for low-voltage applications.
  • Surface-Mount Package: The DMN2005LPK-7 comes in a compact, surface-mount DFN1006-3 package, which is perfect for space-constrained applications and offers excellent thermal performance.
  • RoHS Compliant: In line with environmental directives, this product is RoHS compliant, minimizing the environmental impact by restricting the use of certain hazardous substances in its manufacture.

Applications

The DMN2005LPK-7 is versatile and can be used in various applications, such as:

  • Power Management Circuits
  • Load/Power Switching
  • Battery Protection
  • DC-DC Converters
  • Portable Devices

With its robust design and reliable performance, the DMN2005LPK-7 from Diodes Incorporated is an excellent choice for engineers and designers looking to optimize their power-sensitive designs. Whether it's for portable electronics or for power management tasks, this MOSFET combines efficiency with functionality to meet the demands of modern electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
465+ $0.1080 $50.2200
1,130+ $0.0886 $100.1180
1,750+ $0.0858 $150.1500
2,410+ $0.0831 $200.2710
3,115+ $0.0803 $250.1345
4,170+ $0.0720 $300.2400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 74,000 pieces
MOQ: 465 pcs
Order Increment : 1 pcs
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