Product Overview: DMN2028UFDH-7 MOSFET

The DMN2028UFDH-7 from Diodes Incorporated is a high-performance, N-Channel enhancement mode Field Effect Transistor (MOSFET) designed for a wide range of applications. This power MOSFET is particularly suitable for use in power management tasks, such as DC-DC converters, load switches, and power supply circuits in consumer electronics, computing devices, and portable equipment.

Key Features

• Low On-Resistance: The DMN2028UFDH-7 boasts an exceptionally low on-resistance (R_DS(on)), which results in reduced conduction losses and improved efficiency in electronic circuits.
• High Continuous Drain Current: With a high continuous drain current (I_D), this MOSFET can handle significant power without compromising performance.
• Advanced Packaging: Utilizing the PowerDI®3333-8 package, the DMN2028UFDH-7 offers excellent thermal performance and a compact footprint, making it ideal for space-constrained applications.
• Low Threshold Voltage: The low threshold voltage ensures that the device can be easily driven at lower gate voltages, which is beneficial for battery-operated devices.
• RoHS Compliant: This product complies with the RoHS directive, making it environmentally friendly by avoiding the use of certain hazardous substances in its manufacture.

Applications

The versatile DMN2028UFDH-7 MOSFET is suited for a variety of applications including:

• Power Management Circuits
• DC-DC Converters
• Load Switches
• Motor Control Systems
• Portable Electronic Devices
• Computing Devices

Technical Specifications

The DMN2028UFDH-7 is characterized by its technical specifications which include:

• Drain-Source Voltage (V_DS): 20V
• Continuous Drain Current (I_D): 6.5A
• Power Dissipation (P_D): 1.25W
• On-Resistance (R_DS(on)): 28mΩ at V_GS = 4.5V
• Operating Temperature Range: -55°C to +150°C

Overall, the DMN2028UFDH-7 is a reliable and efficient solution for designers looking to optimize power management in their electronic designs.