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DMN2500UFB4-7

Part No DMN2500UFB4-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.81A 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 810mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.74nC @ 4.5V
Max Input Capacitance 60.67pF @ 16V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 460mW (Ta)
Maximum Rds On at Id,Vgs 400 mOhm @ 600mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package X2-DFN1006-3
Dimension 3-XFDFN
Win Source Part Number 103566-DMN2500UFB4-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN2500UFB4-7 CAD Model

Description

The DMN2500UFB4-7 is a high-performance, surface-mount MOSFET designed by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This particular MOSFET is a part of the company's extensive range of discrete, analog, and mixed-signal components, tailored for various applications across a multitude of industry sectors.

Key Features:

  • Low On-Resistance: The DMN2500UFB4-7 boasts an exceptionally low on-resistance, which significantly reduces conduction losses and improves overall efficiency in electronic circuits.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET provides rapid transition performance, which is crucial for high-frequency operations.
  • Surface-Mount Package: The device comes in a compact DFN2020-6 (Type B) package, making it suitable for space-constrained applications while providing excellent power dissipation and thermal performance.
  • Voltage Rating: With a drain-source voltage (Vds) of 200V, the DMN2500UFB4-7 is capable of handling high voltage applications, ensuring reliability and robustness in operation.
  • Lead-Free and RoHS Compliant: In alignment with environmental standards, this MOSFET is lead-free and RoHS compliant, minimizing the environmental impact and meeting global regulatory requirements.

Applications:

The versatility of the DMN2500UFB4-7 allows it to be utilized across a diverse range of applications. It is particularly well-suited for:

  • Power Management Solutions
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives
  • LED Lighting

Quality and Reliability:

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The DMN2500UFB4-7 is subject to rigorous testing and quality control procedures, ensuring that each component performs to the specifications and withstands the demands of real-world applications.

For designers and engineers looking for a reliable and efficient MOSFET solution, the DMN2500UFB4-7 from Diodes Incorporated offers a blend of performance, compactness, and environmental compliance, making it an excellent choice for next-generation electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
665+ $0.0875 $58.1875
1,610+ $0.0718 $115.5980
2,495+ $0.0695 $173.4025
3,435+ $0.0674 $231.5190
4,445+ $0.0651 $289.3695
5,945+ $0.0584 $347.1880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,000 pieces
MOQ: 665 pcs
Order Increment : 1 pcs
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