Overview of DMN6017SFV-7 MOSFET
The DMN6017SFV-7 is a high-performance N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This component is engineered to deliver efficient power control and management in a wide array of electronic applications. Its compact form factor and robustness make it an ideal choice for space-constrained and energy-sensitive designs.
Key Features
- Low On-Resistance: The DMN6017SFV-7 boasts an exceptionally low on-resistance (R<sub>DS(on)), reducing power loss and improving efficiency in circuit operation.
- High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), enabling the handling of high current loads with ease.
- PowerDI3333-8 Package: Encased in a compact PowerDI3333-8 package, the DMN6017SFV-7 is optimized for minimal footprint and low profile applications.
- High Thermal Performance: Its excellent thermal characteristics ensure reliable performance even under high temperature operating conditions.
- Lead-Free and RoHS Compliant: Adhering to environmental standards, this product is lead-free and meets RoHS compliance, making it suitable for use in green products.
Applications
The versatility of the DMN6017SFV-7 allows it to be integrated into a variety of applications, including:
- DC/DC Converters
- Power Management Systems
- Load Switches
- Battery Management
- Motor Drives
- Computing and Server Applications
Technical Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
60V
Continuous Drain Current (I<sub>D)
16A
Power Dissipation (P<sub>D)
2.5W
R<sub>DS(on) Max (@ V<sub>GS = 10V)
8.5mΩ
Operating Temperature Range
-55°C to +150°C
For designers and engineers seeking a reliable and efficient power transistor solution, the DMN6017SFV-7 from Diodes Incorporated offers the perfect blend of performance, size, and environmental consideration.