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DMN6066SSS-13

Part No DMN6066SSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 3.7A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10.3nC @ 10V
Max Input Capacitance 502pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 66 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 014460-DMN6066SSS-13
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN6066SSS-13 CAD Model

Description

Overview of DMN6066SSS-13 MOSFET

The DMN6066SSS-13 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and compact solutions for a wide range of electronic applications.

Key Features

  • Low On-Resistance: The DMN6066SSS-13 features very low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), making it suitable for high-power applications.
  • High-Speed Switching: The device is capable of high-speed switching operations, which is essential for applications that require fast response times.
  • Power Dissipation: It has an excellent power dissipation rating, ensuring that the device can handle sustained operational conditions without overheating.
  • Advanced Packaging: The DMN6066SSS-13 comes in an SOP-8 package, which is known for its small size and low thermal resistance, allowing for a compact PCB layout.

Applications

The DMN6066SSS-13 MOSFET is versatile and can be used in various applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Motor Control Systems
  • Battery Management Systems
  • Switching Regulators

Technical Specifications

Some of the key technical specifications of the DMN6066SSS-13 include:

  • V<sub>DS (Drain-Source Voltage): 60V
  • I<sub>D (Continuous Drain Current): 8A
  • R<sub>DS(on) (Static Drain-Source On-Resistance): 29 mΩ at V<sub>GS = 10V
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

Diodes Incorporated ensures that the DMN6066SSS-13 meets the highest quality and reliability standards. The device is RoHS compliant and is designed to withstand rigorous industry testing, ensuring a reliable performance in a variety of environmental conditions.

With its robust design and versatile application range, the DMN6066SSS-13 is an excellent choice for designers looking to optimize their power management and switching systems with a high-efficiency, space-saving solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3060 $50.4900
350+ $0.2866 $100.3100
545+ $0.2769 $150.9105
780+ $0.2576 $200.9280
1,010+ $0.2479 $250.3790
1,260+ $0.2382 $300.1320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,620 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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