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DMN62D0LFB-7B

Part No DMN62D0LFB-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100MA 3-DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Cut Reel
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.45nC @ 4.5V
Max Input Capacitance 32pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 470mW (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 100mA, 4V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-X1DFN1006
Dimension 3-UFDFN
Win Source Part Number 102478-DMN62D0LFB-7B
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian DMN62D0LFB-7B CAD Model

Description

Diodes Incorporated DMN62D0LFB-7B N-Channel MOSFET

The DMN62D0LFB-7B is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) produced by the renowned semiconductor manufacturer, Diodes Incorporated. This MOSFET is a part of Diodes Incorporated’s extensive range of discrete, logic, analog, and mixed-signal semiconductors. It is designed to deliver efficient power management and signal processing in a wide array of electronic applications.

The DMN62D0LFB-7B boasts a compact form factor with its SOT-23 package, making it an ideal choice for space-constrained applications. The device features a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 3.7A, and a power dissipation (PD) of 1.25W, providing a balanced performance for various circuit designs.

With its low on-resistance (RDS(on)), the DMN62D0LFB-7B ensures high efficiency and minimal power loss during operation, which is crucial for power-sensitive applications. The low threshold voltage (VGS(th)) allows for ease of control at lower gate voltages, enhancing the device's versatility in different circuit topologies.

Key features of the DMN62D0LFB-7B include:

  • High Continuous Drain Current (ID) of 3.7A
  • Low On-Resistance (RDS(on))
  • Drain-Source Voltage (VDS) of 20V
  • Gate-Source Voltage (VGS) of ±8V
  • Advanced High-Cell Density Trench Technology
  • RoHS Compliant and Halogen-Free

The DMN62D0LFB-7B is not only powerful but also environmentally friendly, adhering to RoHS compliance and being halogen-free. This ensures that the product meets the current environmental standards, reducing the harmful impact on the environment.

Designed for a wide range of applications, the DMN62D0LFB-7B is suitable for use in power management circuits, load switches, and conversion systems, among others. Its robustness, efficiency, and small size make it a preferred choice for designers looking to optimize their systems for better performance and energy savings.

Whether you are designing consumer electronics, portable devices, or industrial equipment, the DMN62D0LFB-7B from Diodes Incorporated offers a reliable and effective solution for your N-channel MOSFET needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
755+ $0.0666 $50.2830
1,605+ $0.0624 $100.1520
2,490+ $0.0603 $150.1470
3,570+ $0.0561 $200.2770
4,640+ $0.0539 $250.0960
5,795+ $0.0518 $300.1810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 755 pcs
Order Increment : 1 pcs
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