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DMN67D8LDW-7

Part No DMN67D8LDW-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.23A SOT363 / Mosfet Array 2 N-Channel (Dual) 60V 230mA 320mW Surface Mount SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 230mA
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Power - Max 320mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Base Product Number DMN67
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Win Source Part Number 1325308-DMN67D8LDW-7
Ultra Librarian 3D Model Ultra Librarian DMN67D8LDW-7 CAD Model

Description

Introducing the DMN67D8LDW-7 MOSFET from Diodes Incorporated

The DMN67D8LDW-7 is a high-performance, dual N-channel enhancement mode field-effect transistor (MOSFET) designed by the renowned semiconductor manufacturer, Diodes Incorporated. This product is engineered to provide efficient power management and signal processing in a wide array of electronic applications. The DMN67D8LDW-7 is a testament to Diodes Incorporated's commitment to delivering innovative and reliable components for the modern electronics industry.

Key Features and Benefits

  • Low On-Resistance: The DMN67D8LDW-7 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved power efficiency in circuit designs.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal switching losses and better performance in power conversion systems.
  • Dual MOSFET Configuration: The integration of two N-channel MOSFETs in one package allows for compact designs and simplifies the PCB layout, leading to cost and space savings.
  • Power Dissipation: It is designed to handle significant power levels with a maximum power dissipation of 1.25W, ensuring reliable operation under various conditions.
  • Low Threshold Voltage: The device features a low threshold voltage, making it suitable for low-voltage applications and enabling it to be driven by logic-level voltages.

Applications

The DMN67D8LDW-7 is versatile and can be used in a diverse range of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control Drivers
  • Load/Relay Switching

Product Specifications

The DMN67D8LDW-7 operates with a continuous drain current of 3.7A and a pulsed drain current of 15A. It can handle a maximum drain-source voltage (Vds) of 60V, which makes it suitable for a broad range of applications. The device is housed in a compact SOT-363 package, which is RoHS compliant and designed for surface-mount technology (SMT).

With its robust performance characteristics and compact form factor, the DMN67D8LDW-7 from Diodes Incorporated is an excellent choice for designers looking for a reliable and efficient dual N-channel MOSFET solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
815+ $0.0617 $50.2855
1,980+ $0.0506 $100.1880
3,065+ $0.0490 $150.1850
4,220+ $0.0474 $200.0280
5,450+ $0.0459 $250.1550
7,300+ $0.0411 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,610 pieces
MOQ: 815 pcs
Order Increment : 1 pcs
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