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DMP2006UFGQ-13

Part No DMP2006UFGQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 31 Weeks
Features P-Channel 20 V 17.5A (Ta), 40A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMP2006
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869053-DMP2006UFGQ-13
Ultra Librarian 3D Model Ultra Librarian DMP2006UFGQ-13 CAD Model

Description

The DMP2006UFGQ-13 is a state-of-the-art P-Channel MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is a testament to the company's commitment to delivering energy-efficient and compact solutions for a wide range of electronic applications.

Key Features

  • Low On-Resistance: The DMP2006UFGQ-13 boasts an extremely low on-resistance, which translates to reduced power losses and enhanced efficiency in operation.
  • High Threshold Voltage: With a high threshold voltage, this MOSFET ensures reliable performance and prevents unintentional turn-ons, which is crucial for battery-operated devices and power management circuits.
  • Advanced Packaging: Enclosed in a PowerDI3333-8 package, the DMP2006UFGQ-13 offers a compact footprint and excellent thermal performance, making it suitable for space-constrained applications.
  • RoHS Compliant: Adhering to environmental standards, the product is RoHS compliant, ensuring that it is free from hazardous substances.

Applications

The versatility of the DMP2006UFGQ-13 allows it to be utilized in a variety of applications, including but not limited to:

  • Power management modules
  • Load switches
  • Battery protection circuits
  • DC-DC converters
  • Portable electronic devices

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -20V Continuous Drain Current (I<sub>D) -6.2A Power Dissipation (P<sub>D) 2.5W Operating Temperature Range -55°C to +150°C

Quality and Reliability

The DMP2006UFGQ-13 is built with Diodes Incorporated's rigorous quality control standards, ensuring high reliability and performance consistency. Customers can trust this MOSFET to deliver exceptional performance even under challenging environmental conditions.

Whether for power regulation, switching applications, or protection circuits, the DMP2006UFGQ-13 from Diodes Incorporated stands out as a superior choice for designers and engineers seeking a high-quality P-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.2106 $57.4742
17+ $6.7369 $114.5273
26+ $6.5264 $169.6864
36+ $6.3158 $227.3688
46+ $6.1053 $280.8438
62+ $5.4738 $339.3756
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 55,340 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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