Product Overview

The DMP4047SK3-13 is a high-performance P-Channel MOSFET from Diodes Incorporated, designed to deliver efficient power management and control in a wide range of applications. This MOSFET is an ideal choice for engineers looking for a device with low on-resistance and high switching speed.

Key Features

• Low On-Resistance: The DMP4047SK3-13 features an exceptionally low on-resistance of just 28.7 mOhms at VGS = -10V. This characteristic ensures minimal power loss and heat generation during operation, making it suitable for high-efficiency applications.
• High Power Dissipation: With a power dissipation of 2.5W, this MOSFET can handle significant power levels, which is beneficial for handling larger loads and for applications with higher power requirements.
• Advanced Packaging: The device comes in a surface-mount package (TO-252), which is designed for compact PCB layouts and is ideal for automated assembly processes, saving space and manufacturing costs.
• Voltage Rating: It has a drain-source voltage (VDS) of -40V, making it suitable for various applications that require a high voltage threshold.
• Gate Charge: The MOSFET has a low total gate charge (Qg) of 15.4 nC, which contributes to its fast switching performance and reduces switching losses.

Applications

The DMP4047SK3-13 is versatile and can be used in a variety of applications, including:

• Power Management Circuits
• Load Switches
• Battery Management Systems
• DC-DC Converters
• Motor Drives

Reliability and Compliance

Diodes Incorporated is known for its commitment to quality, and the DMP4047SK3-13 is no exception. It is RoHS compliant, ensuring it meets current environmental standards for hazardous substances. The device also comes with the assurance of reliability and performance, backed by Diodes Incorporated's reputation as a leading manufacturer in the semiconductor industry.

In summary, the DMP4047SK3-13 P-Channel MOSFET is a robust and efficient solution for designers who require a high-performance power management component. Its low on-resistance, high power dissipation, compact packaging, and fast switching capabilities make it a valuable addition to any power-sensitive electronic design.