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DMT3003LFGQ-13

Part No DMT3003LFGQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 22A PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 31 Weeks
Features N-Channel 30 V 22A (Ta), 100A (Tc) 2.4W (Ta), 62W (Tc) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMT3003
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869124-DMT3003LFGQ-13
Ultra Librarian 3D Model Ultra Librarian DMT3003LFGQ-13 CAD Model

Description

DMT3003LFGQ-13 by Diodes Incorporated

The DMT3003LFGQ-13 is a cutting-edge MOSFET product from Diodes Incorporated, renowned for its high efficiency and reliability in a wide range of applications. This particular MOSFET is designed to meet the rigorous demands of modern electronic circuits, providing a compact yet powerful solution for switching and amplification needs.

Key Features:

  • Low On-Resistance: The DMT3003LFGQ-13 boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency during operation. This feature is particularly beneficial in applications where energy conservation is crucial.
  • High Power Density: With its PowerDI3333-8 package, the device offers a high power density, making it an ideal choice for space-constrained applications without compromising on performance.
  • Advanced Technology: Utilizing the latest advancements in MOSFET technology, this product ensures superior switching performance, which is essential for high-speed circuitry and power management systems.
  • Lead-Free and RoHS Compliant: In line with environmental standards, the DMT3003LFGQ-13 is lead-free and fully RoHS compliant, making it a responsible choice for manufacturers looking to minimize their ecological footprint.

Applications:

The versatility of the DMT3003LFGQ-13 MOSFET makes it suitable for a diverse array of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Powered Devices
  • Motor Control Systems
  • Load Switches
  • Computing and Server Applications

Technical Specifications:

  • Drain-Source Voltage (V<sub>DS): 30V
  • Continuous Drain Current (I<sub>D): 8A
  • Power Dissipation (P<sub>D): 2.5W
  • Configuration: Dual N-Channel
  • Operating Temperature Range: -55°C to +150°C

The DMT3003LFGQ-13 is a testament to Diodes Incorporated's commitment to providing high-performance components that cater to the evolving needs of the electronics industry. Whether it's for power regulation, motor control, or any other application requiring efficient power handling, this MOSFET stands out as a robust and reliable choice.

For engineers and designers looking for a MOSFET that delivers both performance and practicality, the DMT3003LFGQ-13 from Diodes Incorporated is an excellent option to consider.

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