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ZTX558QSTZ

Part No ZTX558QSTZ
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description PWR HI VOLTAGE TRANSISTOR EP3 AM
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Box (TB)
Product Status Active
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 10V
Power - Max 1 W
Frequency - Transition 50MHz
Temperature Range - Operating -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Supplier Device Package E-Line (TO-92 compatible)
Standard Package 4,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 758207-ZTX558QSTZ
Ultra Librarian 3D Model Ultra Librarian ZTX558QSTZ CAD Model

Description

Introducing Product ZTX558QSTZ from Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the ZTX558QSTZ, a high-performance PNP transistor designed to meet the needs of a wide range of electronic applications. This product stands out for its remarkable efficiency, reliability, and versatility, making it an excellent choice for designers and engineers looking to enhance their circuit designs.

The ZTX558QSTZ boasts a robust construction with a continuous collector current of up to -1A, which allows it to handle significant power levels in various electronic circuits. Its high power dissipation capability ensures that it can operate at higher temperatures without compromising performance, making it ideal for demanding environments.

With a collector-emitter voltage (VCEO) of -300V, the ZTX558QSTZ provides a wide operating range, which is crucial for applications requiring high voltage levels. This feature, combined with a collector-base voltage (VCBO) of -300V and an emitter-base voltage (VEBO) of -5V, ensures that the transistor can withstand voltage spikes and fluctuations, thus offering a reliable solution for voltage regulation and amplification tasks.

The transistor's gain bandwidth product (fT) is another notable specification, which is typically at 50MHz. This high-frequency response makes it suitable for fast-switching applications, including signal amplification in audio systems, RF circuits, and other high-speed signal processing tasks.

One of the key advantages of the ZTX558QSTZ is its low saturation voltage, which minimizes power loss and improves efficiency in saturation mode applications. Its hFE (DC current gain) is also impressive, ensuring that the transistor can amplify weak signals effectively without significant power consumption.

The ZTX558QSTZ comes in a TO-92 package, a widely used and easily mountable package that facilitates integration into various PCB layouts. Its lead-free and RoHS-compliant design underscores Diodes Incorporated's commitment to environmental sustainability while providing a safe and durable component for electronic devices.

In summary, the ZTX558QSTZ from Diodes Incorporated is an exceptional PNP transistor that offers a perfect blend of high voltage and current capabilities, thermal efficiency, and fast-switching performance. It is an ideal choice for designers seeking to create efficient, reliable, and compact electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.2091 $58.5480
675+ $0.1721 $116.1675
1,045+ $0.1663 $173.7835
1,430+ $0.1617 $231.2310
1,855+ $0.1559 $289.1945
2,480+ $0.1398 $346.7040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,204 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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