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ZTX688BSTZ

Part No ZTX688BSTZ
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 12V 3A E-LINE
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging AMMO PACKAGE
Status Active
Transistor Polarity NPN
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 350mV @ 20mA, 3A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 500 @ 100mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 150MHz
Temperature Range - Operating -55°C to 200°C (TJ)
Mounting Through Hole
Case / Package E-Line (TO-92 compatible)
Win Source Part Number 119354-ZTX688BSTZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZTX688BSTZ CAD Model

Description

The ZTX688BSTZ is a high-performance bipolar NPN transistor from the reputable semiconductor manufacturer, Diodes Incorporated. This device is designed to cater to a wide array of applications requiring high-speed switching and amplification, making it a versatile component for both commercial and industrial uses.

Key Features

  • High Current Gain Bandwidth Product: With an impressive fT of 140MHz, the ZTX688BSTZ is optimized for applications requiring high-frequency operation.
  • High Collector Current: Capable of handling collector currents up to 2A, this transistor can drive larger loads, making it suitable for power management circuits.
  • Low Saturation Voltage: The low VCE(sat) minimizes power loss and ensures efficient operation, which is critical in low-voltage applications.
  • Complementary PNP Type Available: For design flexibility, a complementary PNP transistor is available, allowing for push-pull amplifier configurations.
  • Robust Thermal Performance: The ZTX688BSTZ comes in a surface-mount package designed for optimal heat dissipation, ensuring reliable performance under varying thermal conditions.

Applications

The ZTX688BSTZ is ideal for a range of applications, including:

  • Switching regulators
  • Power amplifiers
  • Motor control circuits
  • Audio amplifiers
  • Signal processing

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the ZTX688BSTZ is no exception. The device is manufactured to meet high standards of reliability and performance, ensuring that it meets the rigorous demands of the electronic components industry. With its advanced specifications and Diodes Incorporated's reputation, the ZTX688BSTZ is a reliable choice for designers and engineers looking for a high-quality NPN transistor.

Technical Specifications

Parameter Value Transistor Polarity NPN Collector-Emitter Voltage (VCEO) 120V Collector Current (IC) 2A Power Dissipation (Pd) 1.25W DC Current Gain (hFE) 1000 Transition Frequency (fT) 140MHz

For detailed information, datasheets, and support, visit the Diodes Incorporated official website or contact your local authorized distributor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.4539 $59.0070
315+ $0.3725 $117.3375
485+ $0.3608 $174.9880
665+ $0.3493 $232.2845
860+ $0.3376 $290.3360
1,150+ $0.3026 $347.9900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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